MMRF5017HS

1

RF Device Data

NXP Semiconductors

RF Power GaN Transistor

This 125 W RF power GaN transistor is capable of broadband operation from

30 to 2200 MHz and includes input matching for extended bandwidth

performance. With its high gain and high ruggedness, this device is ideally

suited for CW, pulse and broadband RF applications.

This part is characterized and performance is guaranteed for applications

operating in the 30 to 2200 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

CW

90

16.0

45.0

CW

125

18.0

59.1

CW

80

18.4

44.0

2200

Pulse

(100 sec, 20% Duty Cycle)

200

17.0

57.0

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

Pulse

(100 sec,

20% Duty Cycle)

> 10:1 at

All Phase

Angles

3.4

(3 dB

Overdrive)

50

No Device

Degradation

1. Measured in 30–940 MHz wideband reference circuit (page 4).

2. The values shown are the minimum measured efficiency performance numbers

across the indicated frequency range.

Features

 Advanced GaN on SiC, offering high power density

 Decade bandwidth performance

 Input matched for extended wideband performance

 High ruggedness: > 10:1 VSWR

Typical Applications

 Ideal for military end--use applications, including the following:

– Narrowband and multi--octave wideband amplifiers

– Radar

– Jammers

–EMC testing

 Also suitable for commercial applications, including the following:

– Public mobile radios, including emergency service radios

– Industrial, scientific and medical

– Wideband laboratory amplifiers

– Wireless cellular infrastructure

This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.

Document Number: MMRF5017HS

Rev. 0, 06/2018

NXP Semiconductors

Technical Data

30–2200 MHz, 125 W CW, 50 V

WIDEBAND

RF POWER GaN TRANSISTOR

MMRF5017HS

NI--400S--2S

Note: The backside of the package is the

source terminal for the transistor.

(Top View)

Drain

21

Figure 1. Pin Connections

Gate

 2018 NXP B.V.