MMRF1005H datasheet(2/15 Pages) NXP

2 / 15 page

RF Device Data

Freescale Semiconductor

MMRF1005HR5 MMRF1005HSR5

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID =50 mA)

V(BR)DSS

120

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =90 Vdc, VGS =0 Vdc)

IDSS

—

Adc

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID = 640 Adc)

VGS(th)

1.0

1.8

2.7

Vdc

Gate Quiescent Voltage

(VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test)

VGS(Q)

2.0

2.4

3.0

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =1.58 Adc)

VDS(on)

0.1

0.25

0.3

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.2

—

Output Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

Input Capacitance

(VDS =50 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

340

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz

Pulse, 200 sec Pulse Width, 10% Duty Cycle

Power Gain

Gps

21.5

22.7

24.0

Drain Efficiency

D

53.5

57.0

—

Input Return Loss

IRL

—

--18

--9

Typical CW Performance (In Freescale CW Application Circuit, 50 ohm system) VDD =50 Vdc, IDQ =10 mA, Pout = 230 W CW, f = 1300 MHz,

TC =61C

Power Gain

Gps

—

20.0

—

Drain Efficiency

D

—

53.0

—

Input Return Loss

IRL

—

--25

—

Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.),

f = 1300 MHz, Pulse, 200 sec Pulse Width, 10% Duty Cycle

VSWR 10:1 at all Phase Angles



No Degradation in Output Power

1. Part internally input matched.

MMRF1005H Datasheet(PDF) 2 Page - NXP Semiconductors

MMRF1005H Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL