MMRF1005H datasheet(5/15 Pages) NXP

5 / 15 page

MMRF1005HR5 MMRF1005HSR5

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS — PULSE

1000

020

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 3. Capacitance versus Drain--Source Voltage

Ciss

100

Coss

Crss

Measured with 30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

Pin, INPUT POWER (dBm) PEAK

Figure 4. Output Power versus Input Power

Actual

Ideal

P1dB = 54.7 dBm

(293 W)

VDD =50 Vdc,IDQ = 100 mA, f = 1300 MHz

Pulse Width = 200 sec, Duty Cycle = 10%

P2dB = 55.1 dBm

(326 W)

P3dB = 55.4 dBm

(345 W)

Pout, OUTPUT POWER (WATTS) PEAK

Figure 5. Power Gain and Drain Efficiency

versus Output Power

500

Figure 6. Power Gain versus Output Power

Pout, OUTPUT POWER (WATTS) PEAK

VDD =50 V

25 V

35 V

100

200

300

350

400

40 V

30 V

100

VDD =50 Vdc,IDQ = 100 mA, f = 1300 MHz

Pulse Width = 200, sec Duty Cycle = 10%

IDQ = 100 mA, f = 1300 MHz

Pulse Width = 200 sec

Duty Cycle = 10%

D

Gps

150

250

45 V

20 V

Figure 7. Efficiency versus Output Power

Pout, OUTPUT POWER (WATTS) PEAK

VDD =50 V

25 V

35 V

100

200

300

350

400

40 V

30 V

IDQ = 100 mA, f = 1300 MHz

Pulse Width = 200 sec

Duty Cycle = 10%

150

250

45 V

20 V

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 8. Power Gain and Drain Efficiency

versus Output Power

500

25_C

TC =--30_C

85_C

Gps

VDD =50 Vdc

IDQ = 100 mA

f = 1300 MHz

Pulse Width = 200 sec

Duty Cycle = 10%

25_C

85_C

--30_C

D

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