MMRF1005H datasheet(1/15 Pages) NXP

Part #	MMRF1005H

Description	RF Power Field Effect Transistors

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

1 / 15 page

MMRF1005HR5 MMRF1005HSR5

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF power transistors designed for CW and pulse applications operating at

1300 MHz. These devices are suitable for use in defense and commercial CW

and pulse applications, such as DME/IFF systems.

 Typical Pulse Performance: VDD =50 Vdc,IDQ = 100 mA

Signal Type

Pout

(W)

f

(MHz)

Gps

(dB)

D

(%)

IRL

(dB)

Pulse (200 sec,

10% Duty Cycle)

250 Peak

1300

22.7

57.0

--18

 Typical CW Performance: VDD =50 Vdc,IDQ =10 mA, TC =61C

Signal Type

Pout

(W)

f

(MHz)

Gps

(dB)

D

(%)

IRL

(dB)

CW

230 CW

1300

20.0

53.0

--25

 Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz

at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 sec

Features

 Characterized with series equivalent large--signal impedance parameters

 Internally matched for ease of use

 Qualified up to a maximum of 50 VDD operation

 Characterized from 20 to 50 V for extended power range

 Integrated ESD protection

 Greater negative gate--source voltage range for improved Class C

operation

 In tape and reel. R5 suffix = 50 units, 56 mm tape width, 13--inch reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +120

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

C

Case Operating Temperature

TC

150

C

Operating Junction Temperature (1)

TJ

225

C

Total Device Dissipation @ TC =25C

Derate above 25C

PD

476

2.38

W

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2)

Unit

Thermal Resistance, Junction to Case

Pulse: Case Temperature 65C, 250 W Peak, 200 sec Pulse Width, 10% Duty

Cycle, 50 Vdc, IDQ = 100 mA, 1300 MHz

CW: Case Temperature 77C, 235 W CW, 50 Vdc, IDQ = 10 mA, 1300 MHz

ZJC

RJC

0.07

0.42

C/W

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.

1300 MHz, 250 W, 50 V

LATERAL N--CHANNEL

RF POWER MOSFETs

MMRF1005HR5

MMRF1005HSR5

NI--780H--2L

MMRF1005HR5

NI--780S--2L

MMRF1005HSR5

Document Number: MMRF1005H

Rev. 1, 4/2015

Freescale Semiconductor

Technical Data

Similar Part No. - MMRF1005H

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	MMRF1004GNR1	965Kb / 27P	RF Power Field Effect Transistors Rev. 1, 1/2014
	MMRF1004N	965Kb / 27P	RF Power Field Effect Transistors Rev. 1, 1/2014
	MMRF1004NR1	965Kb / 27P	RF Power Field Effect Transistors Rev. 1, 1/2014
	MMRF1006H	754Kb / 13P	RF Power Field Effect Transistors Rev. 1, 11/2015
	MMRF1006HR5	754Kb / 13P	RF Power Field Effect Transistors Rev. 1, 11/2015

More results

Similar Description - MMRF1005H

Manufacturer	Part #	Datasheet	Description
Freescale Semiconductor...	MRF1535NT1	486Kb / 14P	RF Power Field Effect Transistors
	MRF5S9100NR1	525Kb / 16P	RF Power Field Effect Transistors
	MRF6S9060MR1	630Kb / 16P	RF Power Field Effect Transistors
	MRF6S27050HR3	463Kb / 12P	RF Power Field Effect Transistors
	MRF18060ALR3	393Kb / 12P	RF Power Field Effect Transistors
	MRF284LR1	376Kb / 12P	RF Power Field Effect Transistors
	MRF21010LR1	383Kb / 8P	RF Power Field Effect Transistors
	MRF21125R3	427Kb / 12P	RF Power Field Effect Transistors
	MRF6V2300NBR1	687Kb / 19P	RF Power Field Effect Transistors
	MRF6V14300HR3	401Kb / 10P	RF Power Field Effect Transistors

More results

MMRF1005H Datasheet(PDF) 1 Page - NXP Semiconductors

MMRF1005H Datasheet(HTML) 1 Page - NXP Semiconductors

Similar Part No. - MMRF1005H

Similar Description - MMRF1005H

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL