LMV225TL datasheet(6/21 Pages) NSC

6 / 21 page

5.0 DC and AC Electrical Characteristics (Continued)

Unless otherwise specified, all limits are guaranteed to V

DD = 5.0V; TJ = 25˚C. Boldface limits apply at temperature extremes.

(Note 4)

Symbol

Parameter

Condition

Min

Typ

Max

Units

Variation Due to Temperature

900 MHz, RF

IN = 0 dBm

Referred to 25˚C

LMV225

+0.89

−1.16

900 MHz, RF

IN =15dBm

Referred to 25˚C

LMV226

+0.25

−0.16

LMV228

+0.46

−0.62

1800 MHz, RF

IN = 0 dBm

Referred to 25˚C

LMV225

+0.3

−0.82

1800 MHz, RF

IN =15dBm

Referred to 25˚C

LMV226

+0.21

−0.09

LMV228

+0.55

−0.78

1900 MHz, RF

IN = 0 dBm

Referred to 25˚C

LMV225

+0.34

−0.63

1900 MHz, RF

IN =15dBm

Referred to 25˚C

LMV226

+0.21

−0.19

LMV228

+0.55

−0.93

2000 MHz RF

IN = 0 dBm

Referred to 25˚C

LMV225

+0.22

−0.75

2000 MHz RF

IN =15dBm

Referred to 25˚C

LMV226

+0.25

−0.34

LMV228

+0.61

−0.91

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 2: Human body model: 1.5 k

Ω in series with 100 pF. Machine model, 0Ω in series with 100 pF.

Note 3: The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD =

(TJ(MAX) -TA)/θJA. All numbers apply for packages soldered directly into a PC board

Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of

the device such that TJ =TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.

Note 5: Power in dBV = dBm + 13 when the impedance is 50

Ω.

Note 6: All limits are guaranteed by design or statistical analysis

Note 7: Typical values represent the most likely parametric norm.

Note 8: Device is set in active mode with a 10 k

Ω resistor from VDD to RFIN/EN. RF signal is applied using a 50Ω RF signal generator AC coupled to the RFIN/EN

pin using a 100 pF coupling capacitor.

Note 9: Turn-on time is measured by connecting a 10 k

Ω resistor to the RFIN/EN pin. Be aware that in the actual application on the front page, the RC-time constant

of resistor R2 and capacitor C adds an additional delay.

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