ACE16354B datasheet(2/8 Pages) ACE

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ACE16354B

P-Channel Enhancement Mode Power MOSFET

VER 1.1

Ordering information

ACE16354B XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-60

Zero Gate Voltage Drain Current

IDSS

VDS=-60V, VGS=0V

-1

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250µA

-2

-2.6

-3

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-2A

110

VGS=-4.5V, ID=-1A

120

150

Forward Trans Conductance

gFS

VDS=-30V, ID=-3.5A

Diode Forward Voltage

VSD

ISD=-2.8A, VGS=0V

-1.2

Diode Forward Current

Tc=25

-3.5

Switching

Total Gate Charge

VGS=-4.5V,VDS=-30V,

ID=-3.5A,

10.1

Gate-Source Charge

Qgs

3.3

Gate-Drain Charge

Qgd

3.9

Turn-On Delay Time

td(on)

VDD=-30V,RL=10.7

VGEN=-10V ,RGEN=1

ID=-2.8A

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Dynamic

Input Capacitance

Ciss

VGS=0V,VDS=-30V,

f=1MHz

832

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

GM: SOT-23-6

Pb - free

Halogen - free

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