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ACE16354B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE16354B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 8 page  ACE16354B P-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description DC/DC Converter Load switches Features VDS (V) = -60V,ID = -3.5A RDS(ON)@ VGS= -10V , TYP 90 mΩ RDS(ON)@ VGS= -4.5V , TYP 120 mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current (Continuous) *AC TA=25 OC ID -3.5 A TA=70 OC -2.8 Drain Current (Pulse) *B IDM -20 Power Dissipation TA=25 OC PD 2 W Operating Temperature and Storage Temperature TJ,TSTG -55 to 150 OC A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type SOT23-6 |
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