AMC1302 datasheet(7/36 Pages) TI1

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AMC1302-Q1

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6.7 Safety-Related Certifications

VDE

Certified according to DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01,

DIN EN 60950-1 (VDE 0805 Teil 1): 2014-08, and

DIN EN 60065 (VDE 0860): 2005-11

Recognized under 1577 component recognition and

CSA component acceptance NO 5 programs

Reinforced insulation

Single protection

Certificate number: 40040142

File number: E181974

(1)

The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The IS

and PS parameters represent the safety current and safety power, respectively. Do not exceed the maximum limits of IS and PS. These

limits vary with the ambient temperature, TA.

The junction-to-air thermal resistance, RθJA, in the Thermal Information table is that of a device installed on a high-K test board for

leaded surface-mount packages. Use these equations to calculate the value for each parameter:

TJ = TA + RθJA × P, where P is the power dissipated in the device.

TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum junction temperature.

PS = IS × VDD1max + IS × VDD2max, where VDD1max is the maximum high-side voltage and VDD2max is the maximum low-side supply

voltage.

6.8 Safety Limiting Values

Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Safety input, output,

or supply current

RθJA = 85.4°C/W, TJ = 150°C, TA = 25°C,

VDD1 = VDD2 = 5.5 V, see Figure 2

266

RθJA = 85.4°C/W, TJ = 150°C, TA = 25°C,

VDD1 = VDD2 = 3.6 V, see Figure 2

406

Safety input, output,

or total power(1)

RθJA = 85.4°C/W, TJ = 150°C, TA = 25°C, see Figure 3

1463

Maximum safety temperature

150

°C

(1)

The typical value includes one sigma statistical variation.

(2)

See Figure 47.

6.9 Electrical Characteristics

minimum and maximum specifications apply from TA = –40°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, INP

= –50 mV to +50 mV, and INN = GND1 = 0 V; typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ANALOG INPUT

VCMov

Common-mode overvoltage

detection level

(VINP + VINN) / 2 to GND1

VDD1 – 2.1

Hysteresis of common-mode

overvoltage detection level

VOS

Input offset voltage(1)

initial, at TA = 25°C, VINP = VINN = GND1

–100

±10

100

μV

TCVOS

Input offset drift(1)

–0.8

±0.15

0.8

µV/°C

CMRR

Common-mode rejection

ratio

fIN = 0 Hz, VCM min ≤ VCM ≤ VCM max

–100

fIN = 10 kHz, VCM min ≤ VCM ≤ VCM max

–98

CIN

Single-ended input

capacitance(2)

INN = GND1, fIN = 300 kHz

CIND

Differential input

capacitance(2)

fIN = 300 kHz

RIN

Single-ended input

resistance(2)

INN = GND1

4.75

Ω

RIND

Differential input

resistance(2)

4.9

Ω

IIB

Input bias current

INP = INN = GND1; IIB = (IIBP + IIBN) / 2

–48.5

–36

–28.5

μA

TCIIB

Input bias current drift

±1.5

nA/°C

IIO

Input offset current

IIO = IIBP – IIBN

±10

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