TMUX1104 datasheet(16/26 Pages) TI1

16 / 26 page

OUT

Off Isolation

20 Log

GND

NETWORK

ANALYZER

VOUT

50Q

VSIG

50Q

VDD

0.1µF

OUTPUT

GND

VOUT

Output

0 V

VDD

QC = CL ×

VOUT

VEN

VDD

0.1…F

VEN

TMUX1104

SCDS392 – NOVEMBER 2018

www.ti.com

Product Folder Links: TMUX1104

Submit Documentation Feedback

8.7 Charge Injection

The TMUX1104 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS

transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal.

The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted

by the symbol QC. Figure 7 shows the setup used to measure charge injection from source (Sx) to drain (D).

Figure 7. Charge-Injection Measurement Setup

8.8 Off Isolation

Off isolation is defined as the ratio of the signal at the drain pin (D) of the device when a signal is applied to the

source pin (Sx) of an off-channel. Figure 8 shows the setup used to measure off isolation. Use the off isolation

equation to compute off isolation.

Figure 8. Off Isolation Measurement Setup

(1)

TMUX1104 Datasheet(PDF) 16 Page - Texas Instruments