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US112S Datasheet(PDF) 2 Page - Unisonic Technologies

Part # US112S
Description  Suitable to fit all modes of control Found in applications such as Overvoltage crowbar protection
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

US112S Datasheet(HTML) 2 Page - Unisonic Technologies

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UTC US112S/N
SCR
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-013,B
UTC US112S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Gate trigger Current
IGT
VD = 12 V, RL =140
Ω
200
µA
Gate trigger Voltage
VGT
VD = 12 V, RL=140
Ω
0.8
V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 k
Ω, RGK = 1kΩ
Tj = 125°C
0.1
V
Reverse gate voltage
VRG
IRG = 10 µA
8
V
Holding Current
IH
IT = 50 mA, RGK = 1 k
Ω
5
mA
Latching Current
IL
IG = 1 mA ,RGK = 1 k
Ω
6
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 67 % VDRM ,RGK = 220
Ω
Tj = 125°C
5
V/µs
On-state voltage
VTM
ITM = 24A, tp = 380 µs, Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
30
mΩ
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM, RGK = 220
Ω
Tj = 25°C
Tj = 125°C
5
2
µA
mA
UTC US112N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Gate trigger Current
IGT
VD = 12 V, RL =33
Ω
2
15
mA
Gate trigger Voltage
VGT
VD = 12 V, RL=33
Ω
1.3
V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 k
Ω ,Tj = 125°C
0.2
V
Holding Current
IH
IT = 500 mA, Gate open
30
mA
Latching Current
IL
IG = 1.2 IGT
60
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 67 % VDRM , Gate open, Tj = 125°C
200
V/µs
On-state voltage
VTM
ITM = 24A, tp = 380 µs, Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
30
mΩ
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM,
Tj = 25°C
Tj = 125°C
5
2
µA
mA
THERMAL RESISTANCES
PARAMETER
SYMBOL
VALUE
UNIT
Junction to case (DC)
Rth(j-c)
1.3
KW
Junction to ambient
Rth(j-a)
60
K/W



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