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US112S Datasheet(PDF) 3 Page - Unisonic Technologies

Part # US112S
Description  Suitable to fit all modes of control Found in applications such as Overvoltage crowbar protection
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

US112S Datasheet(HTML) 3 Page - Unisonic Technologies

  US112S Datasheet HTML 1Page - Unisonic Technologies US112S Datasheet HTML 2Page - Unisonic Technologies US112S Datasheet HTML 3Page - Unisonic Technologies US112S Datasheet HTML 4Page - Unisonic Technologies  
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UTC US112S/N
SCR
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-013,B
12
9
10
Figure.1:Maximum average power
dissipation vs average on-state current.
0
11
8
7
6
5
4
3
2
1
0
1
23
45
6
7
89
P(W)
360°
α
IT(av)(A)
α
=180°
14
12
Figure.2:Average and D.C. on-state current
vs case temperature
0
10
8
6
4
2
0
25
50
75
100
12
5
IT(av)(A)
α
=180°
Tcase(℃)
DC
Fig.3-2:Relative variation of thermal impedance
junction to ambient vs pulseduration (recommended
pad layout,FR4 PC board)
2.0
1.6
Figure.4-1:Relative variation of gate trigger
current,holding current and latching vs
junction temperature (US112S)
-40
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-20
0
20
40
60
80
100
120
140
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
Tj(℃)
IGT
IH&IL
Rgk=1kΩ
Fig.3-1:Relative variation of thermal impedance
junction to case vs pulse duration.
0.1
0.5
1.0
1E-2
1E-1
1E+0
1E-3
0.2
K=<Zth(j-c)/Rth(j-c)>
tp(s)
Figure.4-2: Relative variation of gate trigger
current,holding current and latching current vs
junction temperature (US112N).
2.4
1.8
2.0
-40
2.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-20
0
20
40
60
80
100
120
140
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
Tj(℃)
IGT
IH&IL
0.10
1.00
1E+2
1E-1
5E+2
1E-2
0.01
K=<Zth(j-a)/Rth(j-a)>
1E+0
1E+1
tp(s)



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