US112S datasheet(4/4 Pages) UTC

4 / 4 page

UTC US112S/N

SCR

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R301-013,B

Fig.6: Relative variation of dV/dt immunity vs gate-

cathode resistance(typical values) (US112S)

0.1

10.0

1.0

0.2

0.0

dV/dt(Rgk)/dV/dt(Rgk=220Ω)

1.0

0.8

0.6

0.4

1.2

Tj=125℃

VD=0.67* VDRM

Rgk(Ω)

Fig.7: Relative variation of dV/dt immunity vs gate-

cathode capacitance(typical values) (US112S)

0.0

4.0

2.0

dV/dt(Cgk)/dV/dt(Rgk=220Ω)

125

100

150

VD=0.67* VDRM

Tj=125℃

Rgk=220Ω

Cgk(nF)

0.5

1.0

1.5

2.5

3.0

3.5

Fig.8: Surge peak on-state current vs number of cycles

0.1

10.0

1.0

0.2

0.0

dV/dt(Rgk)/dV/dt(Rgk=220Ω)

1.0

0.8

0.6

0.4

1.2

Tj=125℃

VD=0.67* VDRM

Rgk(Ω)

Fig.9:Non-repetitive surge peak on-state current for a

sinusoidal pulse with width tp<10ms, and corresponding

values of I t.

100

0.10

1.00

10.00

0.01

ITSM(A),I t(A s)

tp(ms)

1000

dI/dt

limitation

ITSM

Tjinitial=25℃

US112N

US112S

US112N

US112S

2000

Fig.10: On-state characteristics(maximum values).

Figure.5:Relative variation of holding current vs

gate-cathode resistance(typical values)

(US112S)

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

IH(Rgk)/IH(Rgk=1kΩ)

1E-2

1E-1

1E+0

Rgk(kΩ)

0.5

0.0

Ta=25℃

1E+1

I t

200

0.5

1.0

1.5

0.0

ITSM

100

4.5

4.0

3.5

3.0

2.5

2.0

5.0

VTM(V)

Tj=max:

Vto=0.85V

Rd=30mΩ

Tj=25℃

Tj=Tjmax.

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