111RIA datasheet(3/8 Pages) IRF

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110/111RIA Series

Bulletin I25204 rev. B 09/03

www.irf.com

dv/dt Maximum critical rate of rise of

off-state voltage

RRM

Max. peak reverse and off-state

DRM

leakage current

Blocking

500

V/µs

J = TJ max. linear to 80% rated VDRM

Parameter

110/111RIA

Units Conditions

J = TJ max, rated VDRM/VRRM applied

Maximum peak gate power

J = TJ max, t

p ≤ 5ms

G(AV)

Maximum average gate power

3.0

J = TJ max, f = 50Hz, d% = 50

Max. peak positive gate current

3.0

J = TJ max, t

p ≤ 5ms

Maximum peak positive

gate voltage

-V

Maximum peak negative

gate voltage

DC gate current requiredT

J = - 40°C

to trigger

J = 25°C

J = 140°C

DC gate voltage requiredT

J = - 40°C

to trigger

J = 25°C

J = 140°C

DC gate current not to trigger

6.0

Parameter

110/111RIA

Units Conditions

Triggering

J = TJ max

TYP.

MAX.

180

120

2.5

1.6

Max. gate current/ voltage not to

trigger is the max. value which

will not trigger any unit with rated

DRM anode-to-cathode applied

Max. required gate trigger/ cur-

rent/ voltage are the lowest value

which will trigger all units 12V

anode-to-cathode applied

J = TJ max, t

p ≤ 5ms

Max. operating temperature range

-40 to 140

Tstg

Max. storage temperature range

-40 to 150

thJC

Max. thermal resistance,

junction to case

thCS

Max. thermal resistance,

case to heatsink

Mounting torque, ± 10%

15.5

Non lubricated threads

(137)

Lubricated threads

(120)

Approximate weight

130

Parameter

110/111RIA

Units Conditions

0.27

DC operation

0.1

Mounting surface, smooth, flat and greased

Thermal and Mechanical Specification

°C

K/W

(lbf-in)

Case style

TO - 209AC (TO-94)

See Outline Table

DC gate voltage not to trigger

0.25

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