111RIA datasheet(7/8 Pages) IRF

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110/111RIA Series

Bulletin I25204 rev. B 09/03

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Fig. 9 - Gate Characteristics

Fig. 8 - Thermal Impedance Z

thJC Characteristic

Fig. 7 - On-State Voltage Drop Characteristics

Instantaneous On-State Voltage (V)

100

1000

10000

111RIA Series

Tj = 140˚C

Tj = 25˚C

Square Wave Pulse Duration (s)

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

111RIA Series

Steady State Value

RthJC = 0.27 K/W

(DC Operation)

Instantaneous Gate Current (A)

0.1

100

0.001

0.01

0.1

100

1000

VGD

IGD

(b)

(a)

(1)

(3)

a) Recommended load line for

b) Recommended load line for

Frequency Limited by PG(AV)

(2)

(1) PGM = 12W, tp = 5ms

(2) PGM = 30W, tp = 2ms

(3) PGM = 60W, tp = 1ms

(4) PGM = 200W, tp = 300µs

<=30% rated di/dt: 15V, 40ohms

tr<=1 µs, tp=>6µs

rated di/dt: 20V, 30ohms;

tr<=0.5 µs, tp=>6µs

Rectangular gate pulse

Device: 111RIA Series

(4)

110/111RIA Series

Device:110/111RIASeries

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