2N6487 datasheet(1/8 Pages) ONSEMI

Part #	2N6487

Description	Complementary Silicon Plastic Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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Complementary Silicon Plastic

Power Transistors

. . . designed for use in general–purpose amplifier and switching

applications.

• DC Current Gain Specified to 15 Amperes —

hFE = 20–150 @ IC = 5.0 Adc

= 5.0 (Min) @ IC = 15 Adc

• Collector–Emitter Sustaining Voltage —

VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490

= 80 Vdc (Min) – 2N6488, 2N6491

• High Current Gain — Bandwidth Product

fT = 5.0 MHz (Min) @ IC = 1.0 Adc

• TO–220AB Compact Package

MAXIMUM RATINGS (1)

Rating

Symbol

2N6487

2N6490

2N6488

2N6491

Unit

Collector–Emitter Voltage

VCEO

60

80

Vdc

Collector–Base Voltage

VCB

70

90

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

IC

15

Adc

Base Current

IB

5.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

75

0.6

Watts

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

1.8

0.014

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.67

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

70

_C/W

(1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor)

April, 2002 – Rev. 10

1

Publication Order Number:

2N6487/D

2N6487

2N6488

2N6490

2N6491

*ON Semiconductor Preferred Device

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80 VOLTS

75 WATTS

*

CASE 221A–09

TO–220AB

NPN

PNP

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

1

2

3

4

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