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2SC5765 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5765 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC5765 2002-01-16 1 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS · Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta ==== 25°C) Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Base voltage VEBO 7 V DC IC 5 Collector current Pulsed ICP 9 A Collector power dissipation PC (Note1) 550 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note 1: When a device is mounted on a glass epoxy board (35 mm ´ 30 mm ´ 1mm) Electrical Characteristics (Ta ==== 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA Collector-Emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 10 ¾ ¾ V hFE(1) (Note2) VCE = 1.5 V, IC = 0.5 A 450 ¾ 700 hFE(2) (Note2) VCE = 1.5 V, IC = 2 A 320 ¾ ¾ DC current gain hFE(3) (Note2) VCE = 1.5 V, IC = 5 A 170 ¾ ¾ Collector-Emitter saturation voltage VCE (sat) (Note2) IC = 3 A, IB = 60 mA ¾ ¾ 0.27 V Collector-Output Capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 25 ¾ pF Note 2: Pulse test Unit: mm JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g |
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