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ES1DV Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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ES1DV Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page ![]() ES1DV CREAT BY ART - Glass passivated junction chip - Ideal for automated placement - Ultra fast recovery time for high efficiency - Halogen-free according to IEC 61249-2-21 Molding compound: UL flammability classification rating 94V-0 Part No. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test SYMBOL UNIT VRRM V VRMS V VDC V IF(AV) A trr ns CJ pF TJ °C TSTG °C Version: B1601 Taiwan Semiconductor ES1DV 200 140 200 17 0.92 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: DO-214AC (SMA) DO-214AC (SMA) 1A, 200V Surface Mount Ultra Fast Rectifier FEATURES Moisture sensitivity level (MSL): level 1, per J-STD-020 Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER IR A Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 Maximum instantaneous forward voltage (Note 1) @ 1 A VF V 15 μA TJ=25°C TJ=125°C - 55 to +150 - 55 to +150 Typical junction capacitance (Note 3) Typical thermal resistance RθJL RθJA 35 85 Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and applied VR=4.0 V Note 1: Pulse test with PW=300μs, 1% duty cycle 5 100 Operating junction temperature range °C/W Maximum reverse current @ rated VR Maximum reverse recovery time (Note 2) Storage temperature range |
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