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ES1DV Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # ES1DV
Description  1A, 200V Surface Mount Ultra Fast Rectifier
PDF  4 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

ES1DV Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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ES1DV
CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- Ultra fast recovery time for high efficiency
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
SYMBOL
UNIT
VRRM
V
VRMS
V
VDC
V
IF(AV)
A
trr
ns
CJ
pF
TJ
°C
TSTG
°C
Version: B1601
Taiwan Semiconductor
ES1DV
200
140
200
17
0.92
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
DO-214AC (SMA)
DO-214AC (SMA)
1A, 200V Surface Mount Ultra Fast Rectifier
FEATURES
Moisture sensitivity level (MSL): level 1, per J-STD-020
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
IR
A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
V
15
μA
TJ=25°C
TJ=125°C
- 55 to +150
- 55 to +150
Typical junction capacitance (Note 3)
Typical thermal resistance
RθJL
RθJA
35
85
Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and applied VR=4.0 V
Note 1: Pulse test with PW=300μs, 1% duty cycle
5
100
Operating junction temperature range
°C/W
Maximum reverse current @ rated VR
Maximum reverse recovery time (Note 2)
Storage temperature range


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