AP65403 datasheet(4/15 Pages) DIODES

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AP65403

Document number: DS37126 Rev. 1 - 2

4 of 15

www.diodes.com

March 2014

AP65403

Electrical Characteristics (@TA = +25°C, VIN = 12V, unless otherwise specified.)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ISHDN

Shutdown Supply Current

VEN = 0V

—

0.3

3.0

µA

Supply Current (Quiescent)

VEN = 2.0V, VFB = 1.0V

—

0.3

1.5

RDS(ON)1

High-Side Switch On-Resistance (Note 8)

—

Ω

RDS(ON)2

Low-Side Switch On-Resistance (Note 8)

—

Ω

ILIMIT

HS Current Limit

Minimum duty cycle

—

ILIMIT

LS Current Limit

From Drain to Source

—

0.9

—

High-Side Switch Leakage Current

VEN = 0V, VSW = 0V, VSW =12V

—

μA

AVEA

Error Amplifier Voltage Gain

(Note8)

—

800

—

V/V

GEA

Error Amplifier Transconductance

∆IC = ±10µA

—

1000

—

µA/V

GCS

COMP to Current Sense

Transconductance

—

2.8

—

A/V

FSW

Oscillator Frequency

VFB = 0.75V

660

750

840

kHz

FFB

Fold-back Frequency

VFB = 0V

—

0.30

—

fSW

DMAX

Maximum Duty Cycle

VFB = 800mV

—

TON

Minimum On Time

—

160

—

VFB

Feedback Voltage

TA = -40°C to +85°C

—

800

—

Feedback Overvoltage Threshold

—

1.0

—

VEN_RISING

EN Rising Threshold

—

0.7

0.8

1.2

—

EN Lockout Threshold Voltage

—

2.2

2.5

2.7

—

EN Lockout Hysteresis

—

220

—

INUVVTH

VIN Under Voltage Threshold Rising

—

3.80

4.05

4.40

INUVHYS

VIN Under Voltage Threshold Hysteresis

—

250

—

Soft-Start Current

VSS = 0V

—

μA

—

Soft-Start Period

CSS = 0.1µF

—

TSD

Thermal Shutdown (Note 8)

—

160

—

°C

Note:

8. Guaranteed by design

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