AP65403

Document number: DS37126 Rev. 1 - 2

3 of 15

www.diodes.com

March 2014

© Diodes Incorporated

AP65403

Symbol

Parameter

Rating

Unit

Supply Voltage

-0.3 to 20

V

Switch Node Voltage

V

Bootstrap Voltage

V

Feedback Voltage

-0.3V to +6.0

V

Enable/UVLO Voltage

-0.3V to +6.0

V

Comp Voltage

-0.3V to +6.0

V

Storage Temperature

-65 to +150

°C

Junction Temperature

+160

°C

Lead Temperature

+260

°C

ESD Susceptibility (Note 5)

HBM

Human Body Model

1.5

kV

MM

Machine Model

150

V

Notes:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may

be affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.

Thermal Resistance

Symbol

Parameter

Rating

Unit

Junction to Ambient

SO-8EP (Note 6)

39.2

°C/W

Junction to Case

SO-8EP (Note 6)

5.6

°C/W

Note:

6. Test condition: SO-8EP: Device mounted on FR-4 substrate (2s2p) 2"x2" PCB, with 2oz copper trace thickness and minimum recommended pad on top

layer and thermal vias to bottom layer ground plane.

Symbol

Parameter

Min

Max

Unit

Supply Voltage

4.75

17.0

V

Operating Ambient Temperature Range

-40

+85

°C

Note:

7. The device function is not guaranteed outside of the recommended operating conditions.