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MPM3530 Datasheet(PDF) 3 Page - Monolithic Power Systems |
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MPM3530 Datasheet(HTML) 3 Page - Monolithic Power Systems |
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3 / 20 page ![]() MPM3530 – 55V, 3A, STEP-DOWN POWER MODULE MPM3530 Rev. 1.0 www.MonolithicPower.com 3 9/21/2018 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2018 MPS. All Rights Reserved. PIN FUNCTIONS Pin # Name Description 1, 42 - 44 VIN Input supply. VIN supplies power to all of the internal control circuitries and the VDD regulator. Place a decoupling capacitor to ground close to VIN to minimize switching spikes. Use wide traces to connect VIN. 2, 12 - 16, 30, 38, 41, 45, 46 PGND Module power ground pin. 3 BST Bootstrap. BST is the positive power supply for the internal floating high-side MOSFET driver. Keep BST floating. 4 - 11 SW Switch output. Keep SW floating. 17 - 28, 47 OUT Module voltage output node. Use wide traces to connect OUT. 29 VDD Power for internal MOSFET driver and BST charging circuit. 31 PG Power good indication. Connect a resistor from PG to a pull-up power source if it is being used. 32 SS Soft start. Float SS for a default 1.2ms SS time. The SS time can be extended by connecting an external capacitor between SS and AGND. 33 - 35 AGND Ground for internal logic and signal circuit. 36 COMP Compensation networks setting. Connect an external resistor series with a capacitor between COMP and AGND. See the Application Information section on page 15 for compensation network configuration details. 37 FB Feedback. FB is the input to the PWM comparator. Connect an external resistor divider between the output and AGND. 39 FREQ Frequency set pin. Connect a resistor from FREQ to ground to set the switching frequency. If an external SYNC clock is applied to FREQ, the converter follows this SYNC clock frequency. 40 EN Enable input. Pull EN below the specified threshold to shut down the chip. There is no internal pull-up or pull-down circuit, so EN cannot be floated. ABSOLUTE MAXIMUM RATINGS (1) Supply voltage (VIN) .....................................60V VSW .......................................-0.5 to (VIN + 0.5V) VBST .....................................................VSW + 6V VOUT ..........................................................16.5V All other pins.................................... -0.3V to 6V EN sink current ........................................150 μA All other pins.................................... -0.3V to 4V Continuous power dissipation (TA = +25°C) (2) .....................................................................5W Junction temperature ............................... 150°C Lead temperature .................................... 260°C Storage temperature.................. -65°C to 150°C Recommended Operating Conditions (3) Supply voltage (VIN) ........................ 4.5V to 55V Output voltage (VOUT)......................... 1V to 15V Operating junction temp. (TJ) ... -40°C to +125°C Thermal Resistance θJA θJC QFN-47 (10mmx12mmx4mm) EVM3530-RF-01A (4)............. 17..... 3.4 .... °C/W JESD51-7 (5) ......................... 17..... 7.4 .... °C/W NOTES: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature TJ (MAX), the junction-to- ambient thermal resistance θ JA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD (MAX) = (TJ (MAX)-TA)/θJA. Exceeding the maximum allowable power dissipation produces an excessive die temperature, causing the regulator to go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on EVM3530-RF-01A,4-layer PCB, 76mmx76mm. 5) The value of θ JA given in this table is only valid for comparison with other packages and cannot be used for design purposes. These values were calculated in accordance with JESD51-7 and simulated on a specified JEDEC board. They do not represent the performance obtained in an actual application. |
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