AL5815/AL5816

Document number: DS39991 Rev. 3 - 2

3 of 12

www.diodes.com

July 2018

© Diodes Incorporated

AL5815/AL5816

Symbol

Parameter

Rating

Unit

Supply Voltage Relative to GND

-0.3 to +65

V

IC Supply Current

18

mA

OUT, FB Relative to GND

-0.3 to +6

V

Enable Pin of AL5815 Relative to GND

-0.3 to +6

V

PWM Pin of AL5816 Relative to GND

V

Operating Ambient Temperature

-40 to +125

°C

Operating Junction Temperature

-40 to +150

°C

Storage Temperature

-55 to +150

°C

Note:

4. Stresses greater than the Absolute Maximum Ratings specified above may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not implied. Device

reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.

ESD Ratings

Symbol

Parameter

Rating

Unit

Human-Body Model (HBM)

2000

V

Charged-Device Model(CDM)

1000

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

Supply Voltage Range Relative to GND Pin

4.5

60

V

OUT Voltage Range

0

4

V

OUT Pin Current

0

15

mA

Operating Ambient Temperature

-40

+105

°C

Operating Junction Temperature

-40

+125

°C

High-Level Input Voltage on ENB

2.5

5.5

V

Low-Level Input Voltage on ENB

0

0.3

V

High-Level Input Voltage on PWM

2.7

V

Low-Level Input Voltage on PWM

0

2.3

V

Symbol

Parameter

Rating

Unit

Junction-To-Ambient Thermal Resistance

134

°C/W

Junction-To-Case(Top) Thermal Resistance

27

°C/W

Note:

5.

Device mounted on 1’’x1’’ FR-4 MRP substrate PC board, 2oz cooper, with minimum recommended pad layout. No thermal via and no ground plane.