BLOCKING

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

VALUES

Maximum critical rate of rise of

off-state voltage

dV/dt

T = 125°C, exponential to 0.67 V

, gate open

J

DRM

V/µs

10

200

mA

Maximum peak reverse and off-state

leakage current at V

, V

RRM

DRM

T = 125°C, gate open circuit

J

Maximum peak reverse leakage current

RMS isolation voltage

T = 25°C

J

50 Hz, circuit to base, all terminals shorted,

T = 25 °C, t = 1s

J

20

2500

µA

V

TRIGGERING

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

VALUES

2

2

10

0.2

mA

8

A

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak negative gate voltage

Maximum gate voltage required to trigger

Maximum gate current required to trigger

Maximum gate voltage that will not trigger

Maximum gate current that will not trigger

2

T = -40°C

J

T = 25°C

J

T = 125°C

J

T = -40°C

J

T = 25°C

J

T = 125°C

J

T = 125°C, rated V

applied

J

DRM

Anode supply =

6V resistive load

2

60

3

1

90

35

V

mA

V

W

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

VALUES

ºC

-40 to 125

1.00

0.10

4

58

2.0

PACK-PAK

(D-19 modified)

g

oz.

Nm

K/W

Maximum junction operating and storage

temperature range

Maximum thermal resistance, junction to case

per junction

Maximum thermal resistance, case to heatsink

(1)

Mounting torque, base to heatsink

Approximate weight

Case style

J

stg

DC operation

Mounting surface, smooth and greased

RoHS

RoHS

Nell High Power Products

NP500 Series

www.nellsemi.com

Page 3 of 7

V

Note

(1) A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the

spread of the compound