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NP503 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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NP503 Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 7 page ![]() ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER V /V , MAXIMUM REPETITIVE DRM RRM PEAK AND OFF-STATE VOLTAGE V V , MAXIMUM NON-REPETITIVE RSM PEAK REVERSE VOLTAGE V l MAXIMUM RRM AT T MAXIMUM J mA NP501/NP501W/NP501S 400 800 1000 10 1200 1600 RoHS RoHS Nell High Power Products NP502/NP502W/NP502S NP503/NP503W/NP503S NP504/NP504W/NP504S NP505/NP505W/NP505S 500 900 1100 1300 1700 ON-STATE CONDUCTION PARAMETER SYMBOL UNIT TEST CONDITIONS Maximum DC output current at case temperature IO Full bridge circuits A 80 ºC Maximum peak, one cycle non-reptitive on-state or forward current ITSM, IFSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms 550 576 460 484 1510 1380 1058 2 kA s A 972 ² Maximum l t for fusing 15125 V 50 VTM VT(TO)1 rt1 mΩ 2 I √t 2 kA √s ² Maximum l √t for fusing No voltage reapplied 100%VRRM reapplied No voltage reapplied 100%VRRM reapplied Sinusoidal half wave, initial T = T maximum J J dl/dt Maximum non-repetitive rate of rise of turned-on current Maximum forward voltage drop Maximum on-state voltage drop Low level value of on-state slope resistance Low level value of threshold voltage (16.7 % x x l <I< x l ), T = T maximum T(AV) T(AV) J J (16.7 % x l <I< x l ), T = T maximum T(AV) T(AV) J J (I> x l ), T = T maximum T(AV) J J I =150A FM 1.03 9.61 7.01 A/µs 2 I t 1.4 1.4 VALUE 0.83 2 2 . l t for time tx = l √t √t x High level value of threshold voltage VT(TO)2 (I> x l ), T = T maximum T(AV) J J rt2 lL lH Maximum latching current Maximum holding current T = 25°C anode supply = 6V, resistive load J mA 200 130 High level value of on-state slope resistance VFM 250 t = 0.1 to 10 ms, no voltage reapplied T = 125 °C from 0.67 V J DRM l = 150A, lg = 500 mA, t < 0.5 µs, tp > 6µs TM r I =150A TM T = 25 °C J T = 25 °C J V V NP500 Series www.nellsemi.com Page 2 of 7 |
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