STD2NB60T4 datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

STD2NB60/STD2NB60-1

2/11

Table 3. Absolute Maximum Ratings

Note: 1. Pulse width limited by safe operating area

2. ISD ≤ 2.6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Table 4. Thermal Data

Table 5. Avalanche Characteristics

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

600

VDGR

Drain- gate Voltage (RGS = 20 kΩ)

600

VGS

Gate-source Voltage

± 30

Drain Current (cont.) at TC = 25 °C

2.6

Drain Current (cont.) at TC = 100 °C

1.6

IDM

(1)

Drain Current (pulsed)

10.4

Ptot

Total Dissipation at TC = 25 °C

Derating Factor

0.4

W°/C

dv/dt (2)

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Symbol

Parameter

Value

Unit

Rthj-case

Thermal Resistance Junction-case

Max

2.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

100

°C/W

Maximum Lead Temperature For Soldering Purpose

275

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, δ < 1%)

2.6

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C; ID = IAR; VDD = 50 V)

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