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APM2701 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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APM2701 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 8 page ![]() Transistors www.kexin.com.cn 1 MOSFET SMD Type Dual MOSFET (N and P Channel) APM2701 Features N-Channel VDS=20V ID=3A RDS(ON) < 70m (typ.) @ VGS=4.5V RDS(ON) < 110m (typ.) @ VGS=2.5V P-Channel VDS=-20V ID=-1.5A RDS(ON) < 190m (typ.) @ VGS=-4.5V RDS(ON) < 235m (typ.) @ VGS=-2.5V Super High Dense Cell Design Reiable and Rugged 1 2 3 4 5 6 Unit: mm 0.15 +0.02 -0.02 SOT-23-6 () +0.01 -0.01 +0.2 -0.1 0.4 -0.1 +0.1 1 Gate1 2 Source2 3 Gate2 4 Drain2 5 Source1 6 Drain1 N-Channel MOSFET (1)G1 (5)S1 (6)D1 P-Channel MOSFET (3)G2 (4)D2 (2)S2 Absolute Maximum Ratings (Ta = 25 unless otherwise noted) Symbol N-Channel P-Channel Unit VDS 20 -20 VGS ±10 ±10 Continuous Drain Current ID * 3 -1.5 300 s Pulsed Drain Current IDM *10 -6 IS *1 -1 Ta=25 Ta=100 RthJA * /W TJ Tstg Note: * Surface Mounted on 1 in 2 pad area, t 10sec. PD *W 0.83 0.3 150 -55 to 150 V 150 A Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Parameter VGS= ±4.5V Diode Continuous Forward Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Marking Information APM2701: M71X XXXXX - Date Code |
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