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IRF830 Datasheet(PDF) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

Part # IRF830
Description  N-Channel PowerMESH MOSFET
PDF  7 Pages
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Manufacturer  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
Direct Link  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRF830 Datasheet(HTML) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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IRF830
N-Channel 500V-1.35
Ω - 4.5A – TO-220
PowerMESHTM MOSFET
www.artschip.com
3
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD=250V ID=2.9A
RG=4.7 Ω
VGS=10V
(see test circuit, figure 3)
11.5
8
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=400V
ID=3A
VGS=10V
22
7.2
8
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD=400V
ID=4.5A
RG=4.7 Ω
VGS=10V
(see test circuit, figure 5)
7
5
15
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
4.5
18
A
A
VSD(*)
Forward On Voltage
ISD=4.5A
VGS=0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=4.5A di/dt =100A/µs
VDD=100v
Tj=150℃
(See test circuit, figure 5)
435
3.3
15
ns
µC
A
(*) Pulsed: pulse duration=300µs, duty cycle 1.5%
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance



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