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IRF830 Datasheet(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

Part # IRF830
Description  N-Channel PowerMESH MOSFET
PDF  7 Pages
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Manufacturer  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
Direct Link  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRF830 Datasheet(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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IRF830
N-Channel 500V-1.35
Ω - 4.5A – TO-220
PowerMESHTM MOSFET
www.artschip.com
1
TYPE
VDSS
RDS(on)
ID
IRF830
500V
<1.5 Ω
4.5A
Typical RDS(on)=1.35 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERYLOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the company’s
consolidated strip layout-based MESH OVERLAY TM process.
This technology matches and improves the performances
compared with standard parts from varous sources.
APPLICATIONS
High current, high speed switching
Swith mode power supplies (SMPS)
DC-AC converters for welding equipment and uninterrup
tible power supplies and motot driver
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
500
V
VDGR
Drain- gate Voltage (RGS=20k)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current (continuous) at Tc=25℃
4.5
A
ID
Drain Current (continuous) at Tc=100℃
2.9
A
IDM(•)
Drain Current (pulsed)
18
A
Ptot
Total Dissipation at Tc=25℃
100
W
Derating Factor
0.8
W/℃
dv/dt(1)
Peak Diode Recovery voltage slope
3.5
V/ns
Tstg
Storage Temperature
-65 to 150
℃
Tj
Max. Operating Junction Temperature
150
℃
(•)Pulse width limited by safe operating area (1) ISD≤4.5A, di/dt ≤75A/µs, VDD≤V(BR)DSS, TJ≤TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet.


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