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830H Datasheet(PDF) 2 Page - KIA Semiconductor Technology

Part # 830H
Description  5A竊?00V N-CHANNEL MOSFET
PDF  8 Pages
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Manufacturer  KIA [KIA Semiconductor Technology]
Direct Link  http://en.kiaic.com/
Logo KIA - KIA Semiconductor Technology

830H Datasheet(HTML) 2 Page - KIA Semiconductor Technology

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5A，500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
830H
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
4. Absolute maximum ratings
Parameter
Symbol
Rating
Units
Drain-source voltage
（note*1）
VDSS
500
V
Continuous drain current
ID
5.0*
A
ID@100℃
Figure3
A
Pulsed drain current，VGS@10V
（note*2）
IDM
Figure6
A
Power dissipation
PD
100
W
Derating factor above 25℃
0.8
W/℃
Gate-source voltage
VGS
+20
V
Pulse avalanche rating
IAS
Figure8
A
Peak diode recovery dv/dt
（note*3）
dv/dt
5.0
V/ns
Maximum temperature for soldering
Leads at 0.063 in （ 1.6mm ） from case for 10
seconds package body for 10 seconds
TL
TPKG
300
260
ºC
Operating junction and storage temperature
range
TJ ,TSTG
-55 to150
ºC
*Drain current limited by maximum junction temperature
Caution：Stresses greater than those listed in the
”Absolute maximum ratings”table may cause permanent
Damage to the device
5. Thermal characteristics
Parameter
Symbol
Rating
Unit
Test condition
Junction-ambient
RθJA
100
ºC/W
1 cubic foot chamber,free air
Junction-case
RθJC
1.25
ºC/W
Drain lead soldered to water cooled heatsink,PD
adjusted for a peak junction temperature of +150℃
2 of8
Rev 1.1 JAN 2014



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