5A，500V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

830H

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

6. Electrical characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Drain-source breakdown voltage

500

-

-

V

Breakdown voltage temperature coeffcient，

Figure 11

Reference to 25℃

0.61

V/℃

Drain-source leakage current

-

-

1

μA

°C

-

-

100

Gate threshold voltage,Figure 12

2

-

4

V

Gate-source forward leakage

-

-

1

uA

Gate-source reverse leakage

-

-

-1

Static drain-source on-resistance

Figure 9 and 10

（note*4）

-

1

1.5

Ω

Forward transconductance

gfs

（note*4）

-

6

-

S

Input capacitance

f=1MHz

Figure 14

-

730

-

pF

Output capacitance

-

80

-

Reverse transfer capacitance

-

8.0

-

Turn-on delay time

-

13

-

ns

Rise time

-

15

-

Turn-off delay time

-

40

-

Fall time

-

20

-

Total gate charge

Figure 15

-

20

-

nC

Gate-source charge

-

3.0

-

Gate-drain charge

-

8.0

-

Continuous source current（body biode）

Integral pn-diode in

MOSFET

-

-

5

A

Maximum pulsed current（body biode）

-

-

20

Diode forward voltage

-

-

1.5

V

Reverse recovery time

di/dt=100A/

μs

-

280

-

nS

Reverse recovery charge

-

1200

-

nC

2.Repetitive rating;pulse width limited by maximum junction temperature

4.pulse widt<380us;duty cycle<2%.

3 of8

Rev 1.1 JAN 2014