SSM3J35FS

2015-09-09

1

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J35FS

○

High-Speed Switching Applications

○

Analog Switch Applications

•

1.2 V drive

•

Low ON-resistance

Absolute Maximum Ratings (Ta = 25˚C)

Characteristic

Symbol

Rating

Unit

Drain–source voltage

-20

V

Gate–source voltage

±10

V

Drain current

DC

-100

mA

Pulse

-200

Drain power dissipation

100

mW

Channel temperature

150

°C

Storage temperature

-55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within

the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Marking

Unit

: mm

JEDEC

-

JEITA

-

TOSHIBA

2-2H1S

Weight

: 2.4 mg (typ.)

1

2

3

1

2

3

PZ

Start of commercial production

2008-03