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SSM3J35FS Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # SSM3J35FS
Description  TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3J35FS Datasheet(HTML) 2 Page - Toshiba Semiconductor

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SSM3J35FS
2015-09-09
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
―
―
±10
μA
Drain–source breakdown voltage
V (BR) DSS ID = -0.1 mA, VGS = 0 V
-20
―
―
V
Drain cutoff current
IDSS
VDS = -20 V, VGS = 0 V
―
―
-1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.4
―
-1.0
V
Forward transfer admittance
|Yfs|
VDS = -3 V, ID = -50 mA
(Note 1)
77
―
―
mS
Drain–source ON-resistance
RDS (ON)
ID = -50 mA, VGS = -4 V
(Note 1)
―
4.3
8
Ω
ID = -50 mA, VGS = -2.5 V
(Note 1)
―
5.6
11
ID = -5 mA, VGS = -1.5 V
(Note 1)
―
8.2
22
ID = -2 mA, VGS = -1.2 V
(Note 1)
―
11
44
Input capacitance
Ciss
VDS = -3 V, VGS = 0 V, f = 1 MHz
―
12.2
―
pF
Reverse transfer capacitance
Crss
―
6.5
―
Output capacitance
Coss
―
10.4
―
Switching time
Turn-on time
ton
VDD = -3 V, ID = -50 mA,
VGS = 0 to -2.5 V
―
175
―
ns
Turn-off time
toff
―
251
―
Drain–source forward voltage
VDSF
ID = 100 mA, VGS = 0 V
(Note 1)
―
0.83
1.2
V
Note 1: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the
SSM3J35FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
(c) VOUT
VDD = -3 V
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
IN
0
-2.5 V
10 μs
VDD
OUT
RL
ton
90%
10%
-2.5 V
0 V
90%
10%
toff
tr
tf
VDS (ON)
VDD



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