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2910N Datasheet(PDF) 2 Page - KIA Semiconductor Technology |
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2910N Datasheet(HTML) 2 Page - KIA Semiconductor Technology |
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2 / 6 page ![]() 130A,100V N-CHANNEL MOSFET KIA SEMICONDUCTORS 2910N KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolute maximum ratings (TC=25 ºC , unless otherwise specified) Parameter Symbol Ratings Units Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±25 V Continuous drain currenetTC=25 ºC2 ID 130 A Continuous drain currenetTC=100 ºC2 99 A 300us pulsed drain current testedTC=25 ºC1 IDP 560 A Avalanche energy single pulse3 EAS 552 mJ Power dissipation TC=25 ºC PD 300 W TC=100 ºC 150 W Maximum junction temperature TJ 175 °C Storage temperature range TSTG -55~+175 °C Diode continuous forward currentTC=25 ºC IS 140 A 5. Thermal characteristics Parameter Symbol Rating Unit Thermal resistance,Junction-to-case θJC 0.5 ºC/W Thermal resistance,Junction-to-ambient θJA 62.5 ºC/W 2 of6 Rev 1.0 Jun. 2016 |
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