130A，100V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

2910N

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

6. Electrical characteristics

°C,unless otherwise notes)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Off Characteristics

Drain-source breakdown voltage

100

-

-

V

Drain-to-source leakage current

-

-

1

μA

-

-

30

μA

Gate-to-source leakage current

-

-

100

nA

-

-

-100

nA

On characteristics

Gate threshold voltage

2.0

-

4.0

V

-

7.0

9.0

m

Ω

Total gate charge

-

130

-

nC

Gate-source charge

-

32

-

Gate-drain (Miller)charge

-

55

-

Gate series resistance

-

1

-

Ω

Turn-on delay time

Ω

-

24

-

nS

Rise time

-

91

-

Turn-off delay time

-

75

-

Fall time

-

65

-

Input capacitance

-

6800

-

pF

Output capacitance

-

630

-

Reverse transfer capacitance

-

350

-

Source-drain body diode characteristics

-

-

1.2

V

Reverse recovery time

-

43

-

ns

Reverse recovery charge

-

67

-

nC

Note: 1. Pulse width limited by safe operating area.

2. Caiculated continuous current based on maximum allowable junction temperature. The package

limitation current is 75A

4. Pulse test; Pulse width<300

μs; duty cycle<2%.

5. Guaranteed by design, not subject to production testing.

6.KIA finished product specifications please customer before placing order, should obtain the latest

version of the finished product specifications.

3 of6

Rev 1.0 Jun. 2016