BUH150 datasheet(4/10 Pages) ONSEMI

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BUH150

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

0.1

0.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = – 20°C

VCE = 1 V

Figure 2. DC Current Gain @ 3 Volt

100

0.1

0.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = – 20°C

VCE = 3 V

0.01

Figure 3. DC Current Gain @ 5 Volt

100

0.1

0.01

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = – 20°C

VCE = 5 V

Figure 4. Collector–Emitter Saturation Voltage

0.01

100

0.1

0.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = – 20°C

IC/IB = 5

0.1

Figure 5. Collector–Emitter Saturation Voltage

0.01

0.1

0.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

0.1

0.01

Figure 6. Base–Emitter Saturation Region

1.5

100

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = – 20°C

IC/IB = 5

0.5

0.1

0.01

IC/IB = 10

100

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