SSM3K35FS datasheet(3/5 Pages) TOSHIBA

Part #	SSM3K35FS

Description	TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 5 page

SSM3K35FS

2014-03-01

ID – VDS

ID – VGS

RDS (ON) – ID

RDS (ON) – VGS

RDS (ON) – Ta

Drain–source voltage VDS (V)

Gate–source voltage VGS (V)

Drain current ID (mA)

Gate–source voltage VGS (V)

Ambient temperature Ta (°C)

200

1.5

0.5

100

300

400

VGS = 1.2 V

1.5 V

1.8 V

Common Source

Ta = 25°C

4 V

10 V

2.5 V

0.01

1000

0.1

100

= 100°C

Common Source

VDS = 3 V

−25°C

25°C

VGS = 1.2 V

1000

100

−50

150

100

RDS (ON) – VGS

Gate–source voltage VGS (V)

Common Source

ID = 5 mA

1.5 V

Common Source

Ta = 25°C

Common Source

ID = 50 mA

Common Source

2.5 V

4 V

= 100°C

25°C

= 100°C

−25°C

2.5 V, 50 mA

4 V, 50 mA

1.5 V, 5 mA

VGS = 1.2 V, ID = 5 mA

25°C

−25°C

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