SSM3K35FS

2014-03-01

1

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM3K35FS

○

High-Speed Switching Applications

○

Analog Switch Applications

• 1.2-V drive

Absolute Maximum Ratings (Ta = 25˚C)

Characteristics

Symbol

Rating

Unit

Drain–source voltage

20

V

Gate–source voltage

±10

V

DC

180

Drain current

Pulse

360

mA

Drain power dissipation

100

mW

Channel temperature

150

°C

Storage temperature

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

⎯

⎯

±10

μA

Drain–source breakdown voltage

20

⎯

⎯

V

Drain cutoff current

⎯

⎯

1

μA

Gate threshold voltage

0.4

⎯

1.0

V

Forward transfer admittance

(Note 1)

115

⎯

⎯

mS

(Note 1)

⎯

1.5

3

(Note 1)

⎯

2

4

(Note 1)

⎯

3

8

Drain–source ON-resistance

(Note 1)

⎯

5

20

Ω

Input capacitance

⎯

9.5

⎯

Reverse transfer capacitance

⎯

4.1

⎯

Output capacitance

⎯

9.5

⎯

pF

Turn-on time

⎯

115

⎯

Switching time

Turn-off time

⎯

300

⎯

ns

Drain–source forward voltage

(Note 1)

⎯

-0.9

-1.2

V

Note 1: Pulse test

Unit: mm

JEDEC

-

JEITA

-

TOSHIBA

2-2H1B

Weight: 2.4 mg (typ.)

Start of commercial production

2008-02