SSM3K72CFS datasheet(3/8 Pages) TOSHIBA

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SSM3K72CFS

5. Electrical Characteristics

Electrical Characteristics

5.1.

5.1. Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Forward transfer admittance

(Note 1)

Symbol

IGSS

IDSS

V(BR)DSS

Vth

RDS(ON)

|Yfs|

Test Condition

VDS = 0 V, VGS = ±16 V

VDS = 0 V, VGS = ±10 V

VDS = 0 V, VGS = ±5 V

VDS = 60 V, VGS = 0 V

VDS = 60 V, VGS = 0 V,

Tj = 150 

ID = 250 µA, VGS = 0 V

VDS = VGS, ID = 250 µA

ID = 100 mA, VGS = 4.5 V

ID = 100 mA, VGS = 5.0 V

ID = 100 mA, VGS = 10 V

ID = 100 mA, VGS = 10 V,

Tj = 150 

VDS = 10 V, ID = 200 mA

Min



1.1



Typ.



3.2

3.1

2.8

5.4

450

Max

±2

±0.5

±0.1

200



2.1

4.7

4.4

3.9

8.1



Unit

µA

Ω

Note 1: Pulse measurement.

5.2.

5.2. Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on delay time)

Switching time (fall time)

Switching time (turn-off delay time)

Symbol

Ciss

Crss

Coss

td(on)

td(off)

Test Condition

VDS = 10 V, VGS = 0 V,

f = 1 MHz

VDD = 40 V, ID = 160 mA,

VGS = 0 to 10 V, RG = 50 Ω

Duty ≤ 1%, VIN: tr, tf < 5 ns,

Common source,

See Chapter 5.3.

Min



Typ.

0.7

Max



Unit

5.3.

5.3. Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 5.3.1

5.3.1

5.3.1 Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 5.3.2

5.3.2

5.3.2 Input Waveform/Output Waveform

Input Waveform/Output Waveform

2016-11-17

Rev.3.0

SSM3K72CFS Datasheet(PDF) 3 Page - Toshiba Semiconductor

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