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SSM3K72CFS Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM3K72CFS Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 8 page ![]() SSM3K72CFS 1 MOSFETs Silicon N-Channel MOS SSM3K72CFS SSM3K72CFS SSM3K72CFS SSM3K72CFS Start of commercial production 2016-02 1. 1. 1. 1. Applications Applications Applications Applications • High-Speed Switching 2. 2. 2. 2. Features Features Features Features (1) ESD protected gate (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V) 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit SSM 1: Gate 2: Source 3: Drain 2016-11-17 Rev.3.0 ©2016 Toshiba Corporation |
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