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SSM3K72CFS Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM3K72CFS Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 8 page ![]() SSM3K72CFS 4 5.4. 5.4. 5.4. 5.4. Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain charge Symbol Qg Qgs Qgd Test Condition VDD = 30 V, ID = 200 mA, VGS = 4.5 V Min Typ. 0.27 0.08 0.08 Max 0.35 Unit nC 5.5. 5.5. 5.5. 5.5. Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Diode forward voltage (Note 1) Symbol VDSF Test Condition ID = -115 mA, VGS = 0 V Min Typ. -0.87 Max -1.2 Unit V Note 1: Pulse measurement. 6. 6. 6. 6. Marking Marking Marking Marking 2016-11-17 Rev.3.0 ©2016 Toshiba Corporation |
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