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40P03 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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40P03 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 4 page  SMD Type IC 1 DIP Type MOSFET TO-220 1 2 3 www.kexin.com.cn 1 GATE 2 DRAIN 3 SOURCE 4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] P-Channel Enhancement MOSFET 40P03 ■ Features ● VDS (V) =-30V,ID =-30 A ● RDS(ON) ＜ 28mΩ (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-4.5V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VD S -30 Gate-Source Voltage VGS ±２０ Continuous Drain Current TC=25℃ -30 TC=100℃ -18 Pulsed Drain Current IDM -120 Power Dissipation PD 31.3 W Thermal Resistance.Junction- to-Ambient RthJA 110 Thermal Resistance.Junction- to-Case Rthc 4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 ℃ V ℃/W A ID G D S |
Similar Part No. - 40P03 |
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Similar Description - 40P03 |
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