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2N3906S Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # 2N3906S
Description  General Purpose Transistors
PDF  6 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

2N3906S Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted) (Continued)
ti
n
U
x
a
M
n
i
M
l
o
b
m
y
S
c
it
s
ir
e
t
c
a
r
a
h
C
ON CHARACTERISTICS (2)
h
n
i
a
G
t
n
e
rr
u
C
C
D
FE
––
(I C = –0.1 mAdc, V CE
–
–
0
6
)
c
d
V
0
.
1
–
=
(I C = –1.0 mAdc, V CE
–
–
0
8
)
c
d
V
0
.
1
–
=
(I C = –10 mAdc, V CE
0
0
3
0
0
1
)
c
d
V
0
.
1
–
=
(I C = –50 mAdc, V CE
–
–
0
6
)
c
d
V
0
.
1
–
=
(I C = –100 mAdc, V CE
–
–
0
3
)
c
d
V
0
.
1
–
=
V
e
g
a
tl
o
V
n
o
it
a
r
u
t
a
S
r
e
tt
i
m
E
–
r
o
t
c
e
ll
o
C
CE(sat)
Vdc
(I C = –10 mAdc, I B
5
2
.
0
–
–
–
)
c
d
A
m
0
.
1
–
=
(I C = –50 mAdc, I B
4
.
0
–
–
–
)
c
d
A
m
0
.
5
–
=
V
e
g
a
tl
o
V
n
o
it
a
r
u
t
a
S
r
e
tt
i
m
E
–
e
s
a
B
BE(sat)
Vdc
(I C = –10 mAdc, I B
5
8
.
0
–
5
6
.
0
–
)
c
d
A
m
0
.
1
–
=
(I C = –50 mAdc, I B
5
9
.
0
–
–
–
)
c
d
A
m
0
.
5
–
=
SMALL–SIGNAL CHARACTERISTICS
f
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
—
n
i
a
G
–
t
n
e
rr
u
C
T
MHz
(I C = –10 mAdc, V CE
–
–
0
5
2
)
z
H
M
0
0
1
=
f
,
c
d
V
0
2
–
=
C
e
c
n
a
ti
c
a
p
a
C
t
u
p
t
u
O
obo
pF
(V CB= –5.0 Vdc, I E
5
.
4
–
–
)
z
H
M
0
.
1
=
f
,
0
=
C
e
c
n
a
ti
c
a
p
a
C
t
u
p
n
I
ibo
pF
(V EB = –0.5 Vdc, I C
0
1
–
–
)
z
H
M
0
.
1
=
f
,
0
=
h
e
c
n
a
d
e
p
m
I
t
u
p
n
I
ie
kΩ
(V CE= –10 Vdc, I C
2
1
0
.
2
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
–
=
h
o
it
a
R
k
c
a
b
d
e
e
F
e
g
a
tl
o
V
re
X 10 –4
(V CE= –10 Vdc, I C
0
1
1
.
0
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
–
=
h
n
i
a
G
t
n
e
rr
u
C
l
a
n
g
i
S
–
ll
a
m
S
fe
—
(V CE= –10 Vdc, I C
0
0
4
0
0
1
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
–
=
h
*
e
c
n
a
tt
i
m
d
A
t
u
p
t
u
O
oe
µ
mhos
(V CE= –10 Vdc, I C
0
6
0
.
3
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
–
=
B
d
F
N
e
r
u
g
i
F
e
s
i
o
N
(V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz)
––
4.0
SWITCHING CHARACTERISTICS
Delay Time
(V CC = – 3.0 Vdc, V BE = 0.5 Vdc,
t d
—
35
Rise Time
I C = –10 mAdc, I B1 = –1.0 mAdc)
t d
—
35
ns
Storage Time
(V CC = –3.0 Vdc, I C = –10 mAdc,
t s
—
225
ns
Fall Time
I B1 = I B2 = –1.0 mAdc)
t f
—
75
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
2008. 01. 09
2/6
Revision No : 0
SEMICONDUCTOR
TECHNICAL DATA
2N3906S



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