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2N3906S Datasheet(PDF) 3 Page - First Silicon Co., Ltd |
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2N3906S Datasheet(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 6 page ![]() Figure 1. Delay and Rise Time Equivalent Test Circuit *Total shunt capacitance of test jig and connectors 10 k 3 V 275 C S < 4.0 pF* 10 k 3 V 275 C S < 4.0 pF* 1N916 + 0.5 V 10 < t 1 < 500 µ s DUTY CYCLE = 2% 10.9 V <1ns <1 ns – 10.6 V t 1 + 9.1 V 0 Figure 2. Storage and Fall Time Equivalent Test Circuit 300ns DUTY CYCLE = 2% TYPICAL TRANSIENT CHARACTERISTICS I C , COLLECTOR CURRENT (mA) Figure 4. Charge Data REVERSE BIAS (VOLTS) Figure 3. Capacitance V CC = 40 V I C / I B = 10 Q T T J = 25°C T J = 125°C C obo C ibo Q A 1.0 2 0 3 0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.3 0.5 0.7 1 0 2.0 3.0 5 0 7.0 10 20 30 40 10 0 7 0 5 0 3 0 2 0 1 0 5000 3000 2000 1000 700 500 300 200 100 70 50 I C , COLLECTOR CURRENT (mA) Figure 6. Fall Time I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time V CC = 40 V I B1 = I B2 t r @V CC=3.0V 40 V I C /I B = 10 t d@V OB=0V 2.0 V 15 V 1.0 2 0 3.0 5.0 7 0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5 0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 I C /I B = 10 I C /I B = 20 0 SEMICONDUCTOR TECHNICAL DATA 2N3906S 2008. 01. 09 3/6 Revision No : 0 |
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