MMBT4403LT1 UNIT 1

MMBT4403LT1 UNIT 2

h PARAMETERS

This group of graphs illustrates the relationship between h fe and other “h” parameters for his series of ransistors. To obtain these curves,

a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly

numbered curves on each graph.

I

Figure 10. Current Gain

I

Figure 12. Voltage Feedback Ratio

0.1

0.2 0.3

0 5 0.7 1 0

2 0 3.0

7.0 5.0 10

1000

700

500

300

200

100

70

50

30

20

10

5 0

2 0

1 0

0 5

0 2

0.1

I

Figure 11. Input Impedance

100

50

20

10

5

2

1

0.5

0.2

0.1

I

Figure 13. Output Admittance

500

100

50

20

10

5 0

2 0

1 0

SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

V

Bandwidth = 1.0 Hz

0.1

0.2 0.3

0 5 0.7 1 0

2 0 3.0

7.0 5.0 10

MMBT4403LT1 UNIT 1

MMBT4403LT1 UNIT 2

MMBT4403LT1 UNIT 1

MMBT4403LT1 UNIT 2

0.1

0 2 0.3

0.5 0.7 1.0

2.0 3.0

7.0 5.0 10

0.1

0.2 0.3

0 5 0.7 1 0

2 0 3.0

7.0 5.0 10

R

Figure 9. Source Resistance Effects

f = 1.0 kHz

0.010.02 0.05 0.1 0.2

0 5 1 0 2 0

5.0 10 20

50 100

10

8

6

4

2

0

50 100 200

500

1k

2k

5k 10k

20k

50k

10

8

6

4

2

0

f , FREQUENCY (kHz)

Figure 8. Frequency Effects

I

µ

A

100 µA

500 µA

1.0 mA

I

I

µ

A, R

Ω

I

µ

A, R

Ω

I

R

MMBT4403LT1 UNIT 1

MMBT4403LT1 UNIT 2

2008. 08. 08

4/6

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

2N4403