2N4403 datasheet(1/6 Pages) FS

Part #	2N4403

Description	General Purpose Transistors

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 6 page

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

– 40

Vdc

Collector–Base Voltage

V CBO

– 40

Vdc

Emitter–Base Voltage

V EBO

– 5.0

Vdc

Collector Current — Continuous

I C

– 600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR –5 Board (1)

P D

225

mW

T A =25 °C

Derate above 25°C

1.8

mW/°C

Thermal Resistance Junction to Ambient

R θJA

556

°C/W

Total Device Dissipation

P D

300

mW

Alumina Substrate (2) T A = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

417

°C/W

Junction and Storage Temperature

T J , T stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T A = 2

5°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

V (BR)CEO

Vdc

(I C = –1.0 mAdc, I B = 0)

– 40

—

Collector–Base Breakdown Voltage

V (BR)CBO

Vdc

(I C = –0.1mAdc, I E = 0)

– 40

—

Emitter–Base Breakdown Voltage

V (BR)EBO

Vdc

(I E = –0.1mAdc, I C = 0)

– 5.0

—

Base Cutoff Current

I BEV

µAdc

(V CE = –35 Vdc, V EB = –0.4 Vdc)

—

– 0.1

Collector Cutoff Current

I CEX

µAdc

(V CE = –35 Vdc, V EB = –0.4 Vdc)

—

– 0.1

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width <300

µs; Duty Cycle <2.0%.

General Purpose Transistors

PNP Silicon

2

EMITTER

3

COLLECTOR

1

BASE

Device

Marking

Shipping

2N4403LT1G

2T

3000/Tape & Reel

ORDERING INFORMATION

2008. 08. 08

1/6

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

2N4403

SOT–23

1

3

2

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