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LM3311 Datasheet(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM3311
Description  Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch
PDF  29 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3311 Datasheet(HTML) 7 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
Specifications in standard type face are for T
J = 25˚C and those with boldface type apply over the full Operating Tempera-
ture Range (T
J = −40˚C to +125˚C). Unless otherwise specified, VIN =LVIN = 2.5V and IL = 0A.
Symbol
Parameter
Conditions
Min
(Note 5)
Typ
(Note 6)
Max
(Note 5)
Units
UVP
Undervoltage Protection
Threshold
On Threshold (Switch On)
2.5
2.4
V
Off Threshold (Switch Off)
2.3
2.1
I
FREQ
FREQ Pin Current
FREQ = V
IN = 2.5V
2.7
13.5
µA
Electrical Characteristics
Specifications in standard type face are for T
J = 25˚C and those with boldface type apply over the full Operating Tempera-
ture Range (T
J = −40˚C to +125˚C). Unless otherwise specified VIN =LVIN = 2.5V and AVIN = 8V.
Operational Amplifier
Symbol
Parameter
Conditions
Min
(Note 5)
Typ
(Note 6)
Max
(Note 5)
Units
V
OS
Input Offset Voltage
Buffer configuration, V
O =
AV
IN/2, no load
5.7
15
mV
I
B
Input Bias Current (POS Pin) Buffer configuration, V
O =
AV
IN/2, no load (Note 9)
200
550
nA
V
OUT Swing
Buffer, R
L=2k
Ω,V
O min.
0.001
0.03
V
Buffer, R
L=2k
Ω,V
O max.
7.9
7.97
AV
IN
Supply Voltage
412
V
Is+
Supply Current
Buffer, V
O =AVIN/2, No Load
1.5
7.8
mA
I
OUT
Output Current
Source
90
138
195
mA
Sink
105
135
175
Electrical Characteristics
Specifications in standard type face are for T
J = 25˚C and those with boldface type apply over the full Operating Tempera-
ture Range (T
J = −40˚C to +125˚C). Unless otherwise specified VIN =LVIN = 2.5V.
Gate Pulse Modulation
Symbol
Parameter
Conditions
Min
(Note 5)
Typ
(Note 6)
Max
(Note 5)
Units
VFLK
VFLK Voltage Levels
Rising edge threshold
1.4
V
Falling edge threshold
0.4
VDPM
VDPM Voltage Levels
Rising edge threshold
1.4
V
Falling edge threshold
0.4
V
DD(TH)
V
DD Threshold
VGHM = 30V
2.8
3
3.3
V
VGHM = 5V
0.4
0.5
0.7
I
VFLK
VFLK Current
VFLK = 1.5V
4.8
11
µA
VFLK = 0.3V
1.1
2.5
I
VDPM
VDPM Current
VDPM = 1.5V
4.8
11
µA
VDPM = 0.3V
1.1
2.5
I
VGH
VGH Bias Current
VGH = 30V, VFLK High
59
300
µA
VGH = 30V, VFLK Low
11
35.5
R
VGH-VGHM
VGH to VGHM Resistance
20mA Current, VGH = 30V
14
28.5
Ω
R
VGHM-RE
VGHM to RE Resistance
20mA Current, VGH = VGHM
= 30V
27
55
R
VGHM(OFF)
VGH Resistance
VDPM is Low, VGHM = 2V
1.2
1.7
k
Ω
I
CE
CE Current
CE = 0V
40
57
71
µA
V
CE(TH)
CE Voltage Threshold
1.16
1.22
1.30
V
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