Philips Semiconductors

Product specification

NE/SA600

1GHz LNA and mixer

1993 Dec 15

53

LNA OVERLOAD/NOISE/DISTORTION CHARACTERISTICS

4.5V

800

FREQUENCY (MHz)

LNA Input 1dB Gain Compression Point vs Frequency

0

900

1000

1100

1200

–5

–10

–15

–20

–25

–30

–40

TEMPERATURE (

°C)

LNA Input 1dB Gain Compression Point vs Temperature

0

–5

–10

–15

–20

–25

–30

–20

0

20

40

60

80

100

800

FREQUENCY (MHz)

LNA 50

Ω Noise Figure vs Frequency

3

900

1000

1100

1200

2.5

2

1.5

1

0.5

0

LNA 50

Ω Noise Figure vs Temperature

3

2.5

2

1.5

1

0.5

0

–40

TEMPERATURE (

°C)

–20

0

20

40

60

80

100

F = 900MHz

800

FREQUENCY (MHz)

LNA Input Third-Order Intercept vs Frequency

0

900

1000

1100

1200

–2

–4

–6

–8

–10

–12

–14

–16

–18

–20

F2 = F1 + 100kHz

LNA Input Third-Order Intercept vs Temperature

0

–2

–4

–6

–8

–10

–12

–14

–16

–18

–20

F1 = 900MHz

–40

TEMPERATURE (

°C)

–20

0

20

40

60

80

100

F2 = 900.1MHz

TEST FIGURE 2

TEST FIGURE 2

SR00087

Figure 6. LNA Overload/Noise/Distortion Performance Characteristics