| Electronic Components Datasheet Search |
|
SA600 Datasheet(PDF) 12 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
SA600 Datasheet(HTML) 12 Page - NXP Semiconductors |
|
12 / 17 page ![]() Philips Semiconductors Product specification NE/SA600 1GHz LNA and mixer 1993 Dec 15 58 loss (and any other matching required). Typically, VGC is 10.4dB for the NE/SA600 mixer with the net IF impedance equal to 500 Ω. It is more common to express the conversion gain in terms of power, so we have the Power Conversion Gain, PG C + 10 log P A P I * 3dB where PA = VA2 / RIF and PI = VI2 / RRF. RIF is the net resistance at the IF frequency at the IF port, and RRF is the input impedance at the mixer RF port. With a 500 Ω IF impedance and a 50Ω RF input impedance, the conversion gain works out to –2.6dB typically. The power delivered to the load is down 3dB with respect to the available power because of loss in RL1. THEORY OF OPERATION The NE/SA600 is fabricated on the Philips Semiconductors advanced QUBiC technology that features 1 µm channel length MOSFETs and 13GHz FT bipolar transistors. LNA The Low Noise Amplifier (LNA) is a two stage design incorporating feedback to stablize the amplifier. An external bypass capacitor of (typically) 0.01 µF is used. The inputs and outputs are matched to 50 Ω. The amplifier has two gain states: when the ENABLE pin is taken high, the amplifier draws 9mA of current and has 16dB of gain at 900MHz. When the ENABLE pin is low, the amplifier current goes to zero, and the amplifier is replaced by a thru. Typical loss for the thru is 7dB. This dual-gain state approach can be used in bang-bang control systems to achieve a low gain, high overload front-end as well as the more usual high gain, low overload front-end. The amplifier has gain to frequencies past 2GHz, but a practical upper end is 1.6-1.7GHz. Both the input match and the noise figure (NF) can be improved with a shunt 15-18nH inductor at the input. Typically, the gain increases 0.4dB, the match improves to 13-16dB, and the noise figure drops to 1.95-2dB. Variations of any of the RF parameters with VCC is negliglible, and variation with temperature is minimal. Mixer The mixer is a single-balanced topology designed to draw very low current, typically 4mA, and provide a very high input third-order intermodulation intercept point , typically IP3=+6dBm. The RF and LO ports impedances are nearly 50 Ω resistive, and the IF output is an open collector. The open-collector output allows direct interfacing with high impedance IF filters, such as surface acoustic wave (SAW) filters without the need for external step-up transformers (which are needed for 50 Ω output mixers). The basic mixer is functional from DC to well over 2.5GHz, but RF and LO return losses degrade below 100MHz. The IF output can be used from DC to 500MHz or more, although typically the intermediate frequency is in the range 45-120MHz in many 900MHz receivers. To achieve the lowest noise, the LO drive level should be increased as high as possible, consistent with power dissipation limitations. POWER SUPPLY ISSUES VCC bypassing is important, but not extremely critical because of the internal supply regulation of the NE/SA600. The Pin 1 VCC supplies the LNA and powers overhead circuitry. Typical current draw is 9.8mA while enable is high (1mA powered down). The Pin 14 VCCMX powers the mixer and typically has 3.2mA of current (assuming an inductor biasing the IFout back to VCCMX). Care must be taken to avoid bringing any IC pin above VCC by more than 0.3V, or below any ground by more than 0.3V. For example, this can occur if the enable pin is fed from a microcontroller that is powered up quicker than the NE/SA600. In this condition the internal electrostatic discharge (ESD) protection network may turn-on, possibly causing a part misfunction. Generally this condition is reversible, so long as the source creating the overstress is current limited to less than 100mA. To avoid the problem, make sure both VCC pins are tied together near the IC, and install a 1kΩ resistor in series with the enable pin if it is likely to go above VCC. BOARD LAYOUT CONSIDERATIONS The LNA is sensitive to mutual inductance from the input to ground. Therefore long narrow input traces will degrade the input match. Ideally, a top side ground-plane should be employed to maximize LNA gain and minimize stray coupling (such as LO to antenna). To avoid amplifier peaking, the output and input grounds should not be run together. Attach both grounds to a solid ground plane. A solid ground plane beneath the package will maximize gain. Top side to back side ground through holes are highly recommended. The mixer is relatively insensitive to grounding. Care should be taken to minimize the capacitance on the RF port (Pin 11) for best noise figure. Also, the capacitance on the IFout pin must be kept small to avoid conversion gain rolloff when using high IF frequencies. The purpose of the inductor from IFout to VCC is to set the midpoint of the IF swing to be VCC. Without this inductor the part is sensitive to output overload under low VCC (VCC = 4.5V) and hot temperature conditions. The VCCMX pin must be kept at the same potential as the VCC pin. APPLICATIONS INFORMATION The NE/SA600 is a high performance, wide-band, low power, low noise amplifier (LNA) and mixer circuit integrated in a BiCMOS technology. It is ideally suited for RF receiver front-ends for both analog and digital communications systems. There are several advantages to using the NE/SA600 as a high frequency front-end block instead of a discrete implementation. First is the simplicity of use. The NE/SA600 does not need any external biasing components. Due to the higher level of integration and small footprint (SO14) package it occupies less space on the printed circuit board and reduces the manufacturing cost of the system. Also the higher level of integration improves the reliability of the LNA and mixer over a discrete implementation with several components. The LNA thru mode in NE/SA600 helps reduce power consumption in applications where the amplifiers can be disabled due to higher received signal strength (RSSI). Other advantages of this feature are described later in this section. The mixer is an active mixer with excellent conversion gain at low LO input levels, so LO levels as low as -5dBm to -10dBm can be used depending on the applications requirement for mixer gain, mixer noise figure and mixer third order intercept point. This reduces the LO drive requirements from the VCO buffer, thus reducing its current consumption. Also, due to lower LO levels, the shielding requirements can be minimized or eliminated, resulting in substantial cost savings and weight and space reduction. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |