Philips Semiconductors

Product specification

NE/SA600

1GHz LNA and mixer

1993 Dec 15

60

16.5dB of gain with 2dB of noise figure. In this mode the current

consumption is increased to 13mA. But for hand-held equipment,

the average current consumption will be closer to 5-6mA. The other

advantage of the LNA through mode besides power savings is the

input overload characteristics. Due to the much higher input third

order intercept point of the LNA (+26dBm), the receiver is immune to

strong adjacent channel interference. Implementing this feature with

an FM/IF device such as the NE625/7 with fast RSSI response and

a window comparator toggling the LNA mode of NE/SA600, a fast

two-step AGC with response time less than 10

µs can be achieved.

This is a very useful feature to equalize multipath fading effects in a

mobile radio system.

In conclusion, the NE/SA600 offers higher level of integration, higher

reliability, higher level of performance, ease of use, simpler system

design at a cost lower than the discrete multi-transistor

implementations. In addition, the NE/SA600 provides unique

features to enhance receiver performance which are almost

unattainable with discrete implementations.

14

13

12

11

4

3

2

1

NE/SA600

10

9

8

7

6

5

BANDPASS

FILTER

LO INPUT

BYPASS

RF

INPUT

900MHz

10nF

100pF

0.1

µF

MIXER IN

RF OUT

IF OUT

470nH

100pF

100pF

100pF

C6

10nF

C2

4.7pF

C7

10nF

10

µH

L3

R2

1k

Ω

L2

C8

C9

IN

OUT

VC

C

GNDB

RF INA

GNDA1

VCCMX

GNDMX

IFOUT

RF INMX

BYPASS

GNDLO

LOIN

GNDA2

ENABLE

RF OUTA

R1

1k

Ω

S1

C5

15nH

L1

C3

C4

VCC

VCC

C1

SR00093

Figure 12.