These transistors are designed for general purpose amplifier

Features

Rating

Symbol

Max

Unit

Collector

−Emitter Voltage

45

V

Collector

−Base Voltage

50

V

Emitter−Base Voltage

6.0

V

Collector Curren

t − Continuous

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation,

FR

−4 Board (Note 1)

Derated above 25 C

200

1.6

mW

mW/ C

Thermal Resistance,

Junction

−to−Ambient (Note 1)

600

C/W

Total Device Dissipation,

FR

−4 Board (Note 2)

Derated above 25 C

300

2.4

mW

mW/ C

Thermal Resistance,

Junction

−to−Ambient (Note 2)

400

C/W

Junction and Storage

Temperature Range

−55 to

+150

C

1. FR

−4 @ min pad.

2. FR

−4 @ 1.0 ×1.0 in pad.

2

EMITTER

3

COLL

ECTOR

1

BASE

General Purpose Transistors

NPN Silicon

applications. They are housed in the S

C−89 package which

ORDERING INFORMATION

Device

Marking

Package

BC847EAT1G

1E

SC−89

3,000 / Tape & Reel

BC847EBT1G

1F

3,000 / Tape & Reel

BC847ECT1G

1G

3,000 / Tape & Reel

is designed

for low power surface mount applications.

SC−89

SC−89

1

3

2

SC-89

SEMICONDUCTOR

TECHNICAL DATA

BC847E

2009. 11. 09

1/5

Revision No : 0