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BC847E Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # BC847E
Description  General Purpose Transistors
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

BC847E Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  BC847E Datasheet HTML 1Page - First Silicon Co., Ltd BC847E Datasheet HTML 2Page - First Silicon Co., Ltd BC847E Datasheet HTML 3Page - First Silicon Co., Ltd BC847E Datasheet HTML 4Page - First Silicon Co., Ltd BC847E Datasheet HTML 5Page - First Silicon Co., Ltd  
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC
)
A
m
0
1
=
V(BR)CEO
45
−
−
V
Collector−Emitter Breakdown Voltage
(IC = 10 A, VEB
)
0
=
V(BR)CES
50
−
−
V
Collector−Base Breakdown Voltage
(IC = 10 )
A
V(BR)CBO
50
−
−
V
Emitter−Base Breakdown Voltage
(IE = 1.0 )
A
V(BR)EBO
6.0
−
−
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
−
−
−
−
15
5.0
nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE
A
7E
4
8
C
B
)
V
0
.
5
=
BC847EB
BC847EC
(IC = 2.0 mA, VCE
A
7E
4
8
C
B
)
V
0
.
5
=
BC847EB
BC847EC
hFE
−
−
−
110
200
420
90
150
270
180
290
520
−
−
−
220
450
800
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
−
−
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
−
−
4.5
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k , f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
2009. 11. 09
2/5
Revision No : 0
BC847E



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